Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same

ABSTRACT

A thin film deposition apparatus and an organic light-emitting display device by using the same. The thin film deposition apparatus includes an electrostatic chuck, a plurality of chambers; at least one thin film deposition assembly; a carrier; a first power source plug; and a second power source plug. The electrostatic chuck includes a body having a supporting surface that contacts a substrate to support the substrate, wherein the substrate is a deposition target; an electrode embedded into the body and applying an electrostatic force to the supporting surface; and a plurality of power source holes formed to expose the electrode and formed at different locations on the body.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.12/862,153, filed Aug. 24, 2010 which claims the benefit of and priorityto Korean Application No(s). 10-2009-0078175, filed Aug. 24, 2009 and10-2010-0011479 filed Feb. 8, 2010, in the Korean Intellectual PropertyOffice, the disclosures of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Aspects of the present invention relate to a thin film depositionapparatus and a method of manufacturing an organic light-emittingdisplay device by using the same, and more particularly, to a thin filmdeposition apparatus that can be simply applied to manufacture largedisplay devices on a mass scale, and a method of manufacturing anorganic light-emitting display device by using the thin film depositionapparatus.

2. Description of the Related Art

Organic light-emitting display devices have a larger viewing angle,better contrast characteristics, and a faster response rate than otherdisplay devices, and thus have drawn attention as a next-generationdisplay device.

An organic light-emitting display device includes intermediate layers,including an emission layer disposed between a first electrode and asecond electrode that are arranged to face each other. The electrodesand the intermediate layers may be formed by using various methods, oneof which is a single deposition method. When an organic light-emittingdisplay device is manufactured by using the single deposition method, afine metal mask (FMM) having the same pattern as a thin film to beformed is disposed to closely contact a substrate, and a thin filmmaterial is deposited over the FMM in order to form the thin film havingthe desired pattern.

However, it is disadvantageous to use an FMM when manufacturing organiclight-emitting display devices on a large scale using a large sizedmother-glass. When a large mask, such as an FMM, is used for depositiononto a large sized mother-glass, the mask is likely to bend due to theweight thereof, thereby causing a pattern to be distorted. Accordingly,FMMs have disadvantages with respect to the current trend toward highpitch patterning.

Furthermore, in conventional deposition methods, a metal mask isdisposed on a first surface of a substrate and a magnet is disposed on asecond surface of the substrate while the edges of the substrate arefixed by a chuck, so that the magnet allows the metal mask to contactthe first surface. However, since in this case, only the edges of thesubstrate are supported by the chuck, a central part of the substratemay sag when the substrate is large. The greater the size of thesubstrate, the greater the likelihood of sagging.

SUMMARY OF THE INVENTION

Aspects of the present invention provide a thin film depositionapparatus that may be simply applied to manufacture large displaydevices on a mass scale and which may be applied to perform high-pitchpatterning, and a method of manufacturing an organic light-emittingdisplay device by using the thin film deposition apparatus.

According to an aspect of the present invention, there is provided athin film deposition apparatus including an electrostatic chuck, an aplurality of chambers; at least one thin film deposition assembly; acarrier; a first power source plug; and a second power source plug. Theelectrostatic chuck includes a body having a supporting surface thatcontacts a substrate to affix the substrate by electrostatic force,wherein the substrate is a deposition target; an electrode embedded intothe body and applying an electrostatic force to the supporting surface;and a plurality of power source holes formed to expose the electrode andformed at different locations on the body. The plurality of chambers aremaintained in a vacuum state. The at least one thin film depositionassembly is located in at least one of the plurality of chambers, isseparated from the substrate by a predetermined distance, and is used toform a thin film on the substrate affixed to the electrostatic chuck.The carrier is used to move the electrostatic chuck to pass through theplurality of chambers. The first power source plug is installed to beattachable to and detachable from one of the power source holes in orderto supply power to the electrode. The first power source plug isinstalled at an upstream of a path in which the electrostatic chuck ismoved by the carrier. The second power source plug is installed to beattachable to and detachable from another of the power source holes inorder to supply power to the electrode. The second power source plug isinstalled in the path to be downstream to the first power source plugwith respect to the path.

According to a non-limiting aspect, the first and second power sourceplugs may be disposed in different chambers.

According to a non-limiting aspect, the thin film deposition apparatusmay further include an inversion robot disposed in at least one of theplurality of chambers to turn over the electrostatic chuck to which thesubstrate is affixed; and a third power source plug installed in theinversion robot, the third power source plug installed to be attachableto and detachable from one of the plurality of power source holes inorder to supply power to the electrode.

According to a non-limiting aspect, the carrier may include a supportinstalled to extend through the chambers; a plurality of movement barsengaging the support and supporting edges of the electrostatic chuck;and a plurality of driving units each disposed between the support and arespective one of the plurality of movement bars, the plurality ofdriving units for moving the movement bars along upper surfaces of thesupport, respectively.

According to a non-limiting aspect, the at least one thin filmdeposition assembly may include a deposition source for discharging adeposition material; a deposition source nozzle unit disposed at a sideof the deposition source and including a plurality of deposition sourcenozzles arranged in a first direction; and a patterning slit sheetdisposed opposite to and spaced apart from the deposition source nozzleunit and including plurality of patterning slits arranged in a seconddirection perpendicular to the first direction. Deposition may beperformed while the substrate is moved relative to the thin filmdeposition apparatus in the first direction. The deposition source, thedeposition source nozzle unit, and the patterning slit sheet may beintegrally formed as one body.

According to a non-limiting aspect, the deposition source, thedeposition source nozzle unit, and the patterning slit sheet may beintegrally connected as one body by a plurality of connection members.

According to a non-limiting aspect, the connection members may be formedto seal a space between the deposition source nozzle unit disposed atthe side of the deposition source, and the patterning slit sheet.

According to a non-limiting aspect, the plurality of deposition sourcenozzles may be tilted at a predetermined angle.

According to a non-limiting aspect, the plurality of deposition sourcenozzles may include deposition source nozzles arranged in two rowsformed in the first direction, and wherein each of the deposition sourcenozzles in each of the two rows may be tilted at the predetermined angletoward a corresponding deposition source nozzle of the other of the tworows.

According to a non-limiting aspect, the plurality of deposition sourcenozzles may include deposition source nozzles arranged in two rowsformed in the first direction. Deposition source nozzles of a rowlocated at a first side of the patterning slit sheet may be arranged toface a second side of the patterning slit sheet, and the depositionsource nozzles of the other row located at the second side of thepatterning slit sheet may be arranged to face the first side of thepatterning slit sheet.

According to a non-limiting aspect, the at least one thin filmdeposition assembly may include a deposition source for discharging adeposition material; a deposition source nozzle unit disposed at a sideof the deposition source and including a plurality of deposition sourcenozzles arranged in a first direction; a patterning slit sheet disposedopposite to and spaced apart from the deposition source nozzle unit andincluding a plurality of patterning slits arranged in the firstdirection; and a barrier plate assembly disposed between the depositionsource nozzle unit and the patterning slit sheet in the first direction,and including a plurality of barrier plates for partitioning adisposition space between the deposition source nozzle unit and thepatterning slit sheet into a plurality of sub-deposition spaces. The atleast one thin film deposition apparatus may be disposed apart from thesubstrate by a predetermined distance, and the at least one thin filmdeposition assembly or the substrate may be moved relative to the other.

According to a non-limiting aspect, the plurality of barrier plates mayextend in a second direction that is substantially perpendicular to thefirst direction.

According to a non-limiting aspect, the barrier plate assembly mayinclude a first barrier plate assembly including a plurality of firstbarrier plates; and a second barrier plate assembly including aplurality of second barrier plates.

According to a non-limiting aspect, the first barrier plates and thesecond barrier plates may extend in the second direction.

According to a non-limiting aspect, the first barrier plates may bearranged to correspond to the second barrier plates, respectively.

According to a non-limiting aspect, the deposition source and thebarrier plate assembly may be disposed apart from each other.

According to a non-limiting aspect, the barrier plate assembly and thepatterning slit sheet may be disposed apart from each other.

According to another aspect of the present invention, there is provideda method of manufacturing an organic light-emitting device, the methodincluding affixing a substrate which is a deposition target to anelectrostatic chuck; moving the electrostatic chuck to which thesubstrate is affixed to pass through a plurality of chambers that aremaintained in a vacuum state; inserting a first power source plug into afirst power source hole selected from among the plurality of powersource holes to supply power to the electrode, where the first powersource plug is installed at an upstream of a path in which theelectrostatic chuck is moved; inserting a second power source plug intoa second power source hole selected from among the plurality of powersource holes to supply power to the electrode, where the second powersource plug is installed in the path to be downstream from the firstpower source plug with respect to the path; separating the first powersource plug from the first power source hole; and forming an organiclayer on the substrate by using a thin film deposition assembly disposedin at least one of the plurality of chambers and by moving theelectrostatic chuck supporting the substrate or the thin film depositionassembly relative to the other. The electrostatic chuck includes a bodyhaving a supporting surface that contacts the substrate to support thesubstrate, an electrode embedded into the body and applying anelectrostatic force to the supporting surface, and a plurality of powersource holes that are formed to expose the electrode and formed atdifferent locations on the body.

According to a non-limiting aspect, the first and second power sourceplugs may be disposed in different chambers. The second power sourceplug may be inserted into the second power source hole at the same timethat the first power source plug is separated from the first powersource hole.

According to a non-limiting aspect, an inversion robot may be located inat least one of the plurality of chambers to turn over the electrostaticchuck that supports the substrate. The method may further includeinserting a third power source plug installed in the inversion robotinto a third power source hole selected from among the plurality ofpower source holes; and separating the third power source plug from thethird power source hole when the first power source or second powersource is inserted into the first or second power source hole.

According to a non-limiting aspect, the thin film deposition assemblymay include a deposition source that discharges a deposition material; adeposition source nozzle unit disposed at a side of the depositionsource and including a plurality of deposition source nozzles arrangedin a first direction; and a patterning slit sheet disposed opposite toand spaced apart from the deposition source nozzle unit and including aplurality of patterning slits arranged in a second directionperpendicular to the first direction. The deposition source, thedeposition source nozzle unit, and the patterning slit sheet may beintegrally formed as one body, and the thin film deposition assembly maybe disposed apart from the substrate so that the depositing of thedeposition material is performed while the substrate is moved relativeto the thin film deposition apparatus in the first direction.

According to a non-limiting aspect, the thin film deposition assemblymay include a deposition source that discharges a deposition material; adeposition source nozzle unit disposed at a side of the depositionsource and including a plurality of deposition source nozzles arrangedin a first direction; a patterning slit sheet disposed opposite to andspaced apart from the deposition source nozzle unit and including aplurality of patterning slits arranged in the first direction; and abarrier plate assembly disposed between the deposition source nozzleunit and the patterning slit sheet in the first direction, and includinga plurality of barrier plates for partitioning a deposition spacebetween the deposition source nozzle unit and the patterning slit sheetinto a plurality of sub-deposition spaces. The thin film depositionassembly may be disposed apart from the substrate so that the depositingof the deposition material is performed on the substrate by moving thethin film deposition assembly or the substrate relative to the other.

According to another aspect of the present invention, a thin filmdeposition apparatus may include an electrostatic chuck including a bodyhaving a supporting surface that contacts a substrate to affix thesubstrate by an electrostatic force, wherein the substrate is adeposition target; an electrode embedded into the body and applying theelectrostatic force to the supporting surface; and a plurality of powersource holes formed to expose the electrode and formed at differentlocations on the body; a plurality of chambers that are maintained in avacuum state; at least one thin film deposition assembly located in atleast one of the plurality of chambers and separated from the substrateby a predetermined distance, the at least one thin film depositionassembly being positioned to form a thin film on the substrate affixedto the electrostatic chuck; a carrier that moves the electrostatic chuckalong a predetermined path to pass through the plurality of chambers;and a plurality of power source plugs that removably engage theplurality of power source holes to supply power to the electrode of theelectrostatic chuck, wherein the plurality of power sources are disposedalong the predetermined path through the plurality of chambers such thatthere is at least one power source plug is engaged with a power sourcehole at all times as the electrostatic chuck passes through theplurality of chambers.

According to another aspect of the present invention, a method ofmanufacturing an organic light-emitting device may include affixing asubstrate which is a deposition target to an electrostatic chuck,wherein the electrostatic chuck includes a body having a supportingsurface that contacts the substrate to affix the substrate by anelectrostatic force, an electrode embedded into the body and applying anelectrostatic force to the supporting surface, and a plurality of powersource holes that are formed to expose the electrode and that are formedat different locations on the body; moving the electrostatic chuck towhich the substrate is affixed along a predetermined path to passthrough a plurality of chambers that are maintained in a vacuum state;supplying power to the electrode of the electrostatic chuck by engagingthe electrostatic chuck with one or more of a plurality power sourceplugs arranged along the predetermined path and sequentially insertedinto and removed from the power source holes such that there is at leastone of the plurality of power source plugs engaged with a power sourcehole at all times when the substrate is affixed to the electrostaticchuck and when the electrostatic chuck passes through the plurality ofchambers; and forming an organic layer on the substrate depositing adeposition material from at least one thin film deposition assemblydisposed in at least one of the plurality of chambers as the substratemoves through the at least one of the plurality of chambers.

Additional aspects and/or advantages of the invention will be set forthin part in the description which follows and, in part, will be obviousfrom the description, or may be learned by practice of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects and advantages of the invention will becomeapparent and more readily appreciated from the following description ofthe embodiments, taken in conjunction with the accompanying drawings ofwhich:

FIG. 1 is a schematic view of a thin film deposition apparatus accordingto an embodiment of the present invention;

FIG. 2 is a schematic view of a thin film deposition apparatus accordingto another embodiment of the present invention;

FIG. 3 is a schematic view of an electrostatic chuck included in thethin film deposition apparatus of FIG. 1 or 2, according to anembodiment of the present invention;

FIG. 4 is a cross-sectional view of a first circulating unit included inthe thin film deposition apparatus of FIG. 1 or 2, according to anembodiment of the present invention;

FIG. 5 is a cross-sectional view of a second circulating unit includedin the thin film deposition apparatus of FIG. 1 or 2, according to anembodiment of the present invention;

FIG. 6 is a cross-sectional view of a system that supplies power to theelectrostatic chuck during movement, according to an embodiment of thepresent invention;

FIG. 7 is a cross-sectional view of a system that supplies power to theelectrostatic chuck during movement, according to another embodiment ofthe present invention;

FIG. 8 is a schematic perspective view of a thin film depositionassembly according to an embodiment of the present invention;

FIG. 9 is a schematic sectional side view of the thin film depositionassembly of FIG. 8;

FIG. 10 is a schematic sectional plan view of the thin film depositionassembly of FIG. 8;

FIG. 11 is a schematic perspective view of a thin film depositionassembly according to another embodiment of the present invention;

FIG. 12 is a schematic perspective view of a thin film depositionassembly according to another embodiment of the present invention;

FIG. 13 is a schematic perspective view of a thin film depositionassembly according to another embodiment of the present invention;

FIG. 14 is a schematic sectional side view of the thin film depositionassembly of FIG. 13;

FIG. 15 is a schematic sectional plan view of the thin film depositionassembly of FIG. 13;

FIG. 16 is a perspective view of a thin film deposition assemblyaccording to another embodiment of the present invention; and

FIG. 17 is a cross-sectional view of an organic light-emitting displaydevice manufactured using a thin film deposition assembly, according toan embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings, wherein like reference numerals refer to the like elementsthroughout. The embodiments are described below in order to explain thepresent invention by referring to the figures.

FIG. 1 is a schematic view of a thin film deposition apparatus accordingto another embodiment of the present invention. FIG. 2 is a schematicview of a thin film deposition apparatus 1 according to anotherembodiment of the present invention. FIG. 3 is a schematic view of anelectrostatic chuck 600 included in the thin film deposition apparatusof FIG. 1 or 2, according to an embodiment of the present invention.

In particular and referring to FIG. 1, the thin film depositionapparatus according to the current embodiment includes a loading unit710, an unloading unit 720, a deposition unit 730, a first circulatingunit 610, and a second circulating unit 620.

The loading unit 710 may include a first rack 712, a transport robot714, a transport chamber 716, and a first inversion chamber 718.

A plurality of substrates 500 onto which a deposition material has notyet been applied are stacked up on the first rack 712. The transportrobot 714 picks up one of the substrates 500 from the first rack 712,disposes it on the electrostatic chuck 600 delivered by the secondcirculating unit 620, and moves the electrostatic chuck 600 on which thesubstrate 500 is disposed to the transport chamber 716. Although notshown in the drawings, the transport robot 714 may be disposed in achamber that is maintained at an appropriate degree of vacuum.

The first inversion chamber 718 is disposed adjacent to the transportchamber 716. An inversion robot 719 located in the first inversionchamber 718 turns the electrostatic chuck 600 over to be disposed on thefirst circulating unit 610 on the deposition unit 730.

As illustrated in FIG. 3, in the electrostatic chuck 600, an electrode602 to which voltage is applied is embedded into a body 601 formed ofceramic. When a high voltage is applied to the electrode 602, one of thesubstrates 500 is attached to the body 601. The electrostatic chuck 600will be described in detail later.

Referring to FIG. 1, the transport robot 714 places one of thesubstrates 500 on the electrostatic chuck 600, the electrostatic chuck600 on which the substrate 500 is disposed is moved to the transportchamber 716, and the first inversion robot 719 turns the electrostaticchuck 600 over so that the substrate 500 is turned upside down in thedeposition unit 730. In more detail, the electrostatic chuck 600 isinverted so that the substrate 500 will face the thin film depositionassemblies 100, 200, 300, and 400 when the electrostatic chuck 600 andsubstrate pass through the deposition unit 730, to be described later.Both the transport chamber 716 and the first inversion chamber 718 maybe chambers that are maintained at an appropriate degree of vacuum.

The operation of the unloading unit 720 is opposite to that of theloading unit 710. Specifically, a second inversion robot 729 moves theelectrostatic chuck 600 on which the substrate 500 is disposed, which ismoved from the deposition unit 730, to an ejection chamber 726 byturning the electrostatic chuck 600 over in a second inversion chamber728. Then, an ejection robot 724 picks out the electrostatic chuck 600on which the substrate 500 is disposed from the ejection chamber 726,separates the substrate 500 from the electrostatic chuck 600, and thenplaces the substrate 500 on the second rack 722. The electrostatic chuck600 that is separated from the substrate 500 is returned back to theloading unit 710 via the second circulating unit 620. Both the secondinversion chamber 728 and the ejection chamber 726 may be chambers thatare maintained at an appropriate degree of vacuum. Although not shown inthe drawings, the ejection robot 724 may also be disposed in a chamberthat is maintained at an appropriate degree of vacuum.

However, the present invention is not limited to the above description,and when the substrate 500 is initially disposed on the electrostaticchuck 600, the substrate 500 may be fixed onto a bottom surface of theelectrostatic chuck 600 and may be moved to the deposition unit 730together with the electrostatic chuck 600. (In FIGS. 1 and 2, terms suchas “top surface” and “bottom surface” are with reference to a “topsurface” being a surface facing the viewer in FIGS. 1 and 2 and “abottom surface” as being a surface facing away from the viewer.) In thiscase, for example, the first and second inversion chambers 718 and 728and the first and second inversion robots 719 and 729 are not needed.

The deposition unit 730 includes at least one deposition chamber. Asillustrated in FIG. 1, the deposition unit 730 may include a firstchamber 731, and first to fourth thin film deposition assemblies 100,200, 300, and 400 may be disposed in the first chamber 731. AlthoughFIG. 1 illustrates that a total of four thin film deposition assemblies,i.e., the first to fourth thin film deposition assemblies 100 to 400,are installed in the first chamber 731, the total number of thin filmdeposition assemblies that can be installed may vary according to adeposition material and deposition conditions. The first chamber 731 ismaintained in a vacuum state during a deposition process.

In the thin film deposition apparatus illustrated in FIG. 2, adeposition unit 730 may include a first chamber 731 and a second chamber732 that are connected to each other, and first and second thin filmdeposition assemblies 100 and 200 may be disposed in the first chamber731 and third and fourth thin film deposition assemblies 300 and 400 maybe disposed in the second chamber 732. In this case, other chambers mayfurther be added.

In the embodiment illustrated in FIG. 1, the electrostatic chuck 600 onwhich the substrate 500 is disposed is either moved to the depositionunit 730 or is moved sequentially to the loading unit 710, thedeposition unit 730, and the unloading unit 720 via the firstcirculating unit 610. The electrostatic chuck 600 that is separated fromthe substrate 500 in the unloading unit 720 is moved by the secondcirculating unit 620 to the loading unit 710.

The first circulating unit 610 is installed to more the electrostaticchuck on which the substrate 500 is disposed through the depositionchamber 731, and the second circulating unit 620 is installed to returnthe electrostatic chuck 600 that has been separated from the substrateback to a starting position at the loading unit 710.

FIG. 4 is a cross-sectional view of the first circulating unit 610illustrated in FIG. 1 or 2, according to an embodiment of the presentinvention. Referring to FIG. 4, the first circulating unit 610 accordingto the present embodiment includes a first carrier 611 to move theelectrostatic chuck 600 on which the substrate 500 is disposed.

The first carrier 611 includes a first support 613, a second support614, a movement bar 615, and a first driving unit 616.

The first and second supports 613 and 614 are installed to extendthrough one or more chambers, e.g., the first chamber 731 in thedeposition unit 730 in FIG. 1 and the first and second chambers 731 and732 in the deposition unit 730 in FIG. 2.

The first support 613 is disposed vertically in the first chamber 731and the second support 614 is disposed perpendicular to a lower part ofthe first support 613 in the first chamber 631. (In FIGS. 4 and 5, theterm “vertically” refers to a direction between a thin film depositionassembly, such as thin film deposition assembly 100, and the substrate500 and “horizontally” refers to a direction perpendicular to suchvertical direction and perpendicular to a direction of motion of thesubstrate through the deposition unit 730. In more detail, the verticaldirection and the horizontal direction in FIGS. 4 and 5 correspond tothe Z direction and the X direction, respectively, as shown in FIGS. 8to 16. In the current embodiment illustrated in FIG. 4, the first andsecond supports 613 and 614 are disposed perpendicular to each other,but the present invention is not limited thereto and they may bedisposed in various ways provided the second support 614 is disposedbelow the first support 613.

The movement bars 615 are disposed respectively to move along uppersides of the first support 613. At least one end of each of the movementbars 615 is supported by the first support 613 and another end of eachof the movement bar 614 supports the edge of the electrostatic chuck600. The electrostatic chuck 600 may be moved along the first support613 while being fixedly supported by the movement bars 615. The ends ofthe movement bars 615 which support the electrostatic chuck 600 may bebent toward the first thin film deposition assembly 100 so that thesubstrate 500 is located closer to the first thin film depositionassembly 100.

The first driving unit 616 is included between the first support 613 andeach of the movement bars 615 and moves the movement bars 615 along thefirst support 613. The first driving unit 616 may include a plurality ofrollers 617 to roll along ends of the first supports 613. In thisregard, the first support 613 may be in the form of a rail extending ina direction perpendicular to the X and Z directions as described above,or in other words, in a direction perpendicular to the plane of thecross-sectional view of FIG. 5. The first driving unit 616 applies adriving force to the movement bars 615 to move along the first support613. The driving force may either be generated by the first driving unit616 or be supplied from a separate driving source (not shown). The typeof the first driving unit 616 is not limited provided the first drivingunit 616 can move the rollers 617 and the movement bars 615.

FIG. 5 is a cross-sectional view of the second circulating unit 620 ofFIG. 1 or 2, according to an embodiment of the present invention.Referring to FIG. 5, the second circulating unit 610 according to thepresent embodiment includes a second carrier 621 to return theelectrostatic chuck 600 from which the substrate 500 of FIG. 1 or 2 hasbeen separated to a starting position adjacent the loading unit 710.

The second carrier 621 includes a third support 623, a movement bar 615,and a plurality of first driving units 616.

The third support 623 extends in a similar manner to the first support613 of the first carrier 611. The third support 623 supports themovement bars 615 each having the first driving unit 616, and theelectrostatic chuck 600 from which the substrate 500 has been separatedis placed on the movement bars 615. The constructions of the movementbars 615 and the first driving units 616 are as described above withreference to FIG. 4.

When the electrostatic chuck 600 is moved by the first and secondcarriers 611 and 621, power should be supplied continuously to theelectrostatic chuck 600 even during movement. A system that suppliespower to the electrostatic chuck 600 during movement will now bedescribed in detail.

FIG. 6 is a cross-sectional view of a system that supplies power to theelectrostatic chuck 600 during movement, according to an embodiment ofthe present invention. The electrostatic chuck 600 includes a body 601having a supporting surface 605 that contacts the substrate 500 tosupport a flat larger surface of the substrate 500. The electrode 602 isembedded into the body 601 in order to apply an electrostatic force tothe supporting surface 605. Also, in the body 601, a plurality of powersource holes are formed to expose the electrode 602. Referring to FIG.6, first and second power source holes 603 a and 603 b are formed atdifferent locations. The first and second power source holes 603 a and603 b may be disposed apart from each other.

Referring to FIG. 6, the first and second power source holes 603 a and603 b may be respectively located at the tail and head of the body 610,with respect to a movement direction in which the electrostatic chuck ismoved, as indicated by the arrows in FIG. 6.

In the current embodiment illustrated in FIG. 6, the electrostatic chuck600 is continuously powered on during movement by using a power sourceplug 604 a and a second power source plug 604 b that are respectivelyinstalled in the first and second chambers 731 and 732 which are alsoillustrated in FIG. 2. Accordingly, the electrostatic chuck 600 may bepowered on even if it is moved between adjacent chambers.

The first power source plug 604 a is installed at location upstream inthe path marked by the arrow. In the current embodiment illustrated inFIG. 6, the first power source plug 604 a is disposed in the firstchamber 731. The first power source plug 604 a may be installed to beattachable to and detachable from the first power source hole 603 a orthe second power source hole 603 b. In the current embodimentillustrated in FIG. 6, the first power source plug 604 a is insertedinto the first power source hole 603 a but the present invention is notlimited thereto. Alternatively, the first power source plug 604 ainstalled at an upstream location in the path may be inserted into thesecond power source hole 603 b located at a downstream portion of thebody 610 moving along the path.

The second power source plug 604 b is installed at a downstream locationin the path. The second power source plug 604 b is illustrated as beinglocated in the second chamber 732 in the embodiment illustrated in FIG.6. The second power source plug 604 b may be installed to be attachableto and detachable from the first power source hole 603 a or the secondpower source hole 603 b. In the current embodiment illustrated in FIG.6, the second power source plug 604 b is inserted into the second powersource hole 603 b but the present invention is not limited thereto.Alternatively, the second power source plug 604 b installed at thedownstream of the path may be inserted into the first power source hole603 a located at the tail of the electrostatic chuck 600.

The first and second power source plugs 604 a and 604 b may berespectively installed to be movable within the first and secondchambers 731 and 732. Accordingly, the first power source plug 604 a isinserted into the first power source hole 603 a to supply power to theelectrode 602 while the electrostatic chuck 600 is located within thefirst chamber 731, and the second power source plug 604 b is insertedinto the second power source hole 603 b to supply power to the electrode602 while the electrostatic chuck 600 is located within the secondchamber 732. A chamber door 733 is installed between the first andsecond chambers 731 and 732. When the electrostatic chuck 600 passesthrough the chamber door 733, the first power source plug 604 a isseparated from the first power source hole 603 a at the moment or afterthe second power source plug 604 b is inserted into the second powersource hole 603 b as illustrated in FIG. 6, thereby preventing aninterruption in supply of power to the electrode 602.

In the current embodiment illustrated in FIG. 6, the first and secondpower source plugs 604 a and 604 b are respectively installed in thefirst and second chambers 731 and 732 but the present invention is notlimited thereto and the first and second power source plugs 604 a and604 b may be installed at different locations in the first chamber 731illustrated in FIG. 1. In this case, when the electrostatic chuck 600passes through the chamber door 733, the first power source plug 604 ashould also be separated from the first power source hole 603 a at themoment or after the second power source plug 604 b is inserted into thesecond power source hole 603 b as illustrated in FIG. 6, therebypreventing an interruption in supply of power to the electrode 602.

Alternatively, the first and second power source holes 603 a and 603 bmay be located in a position other than the tail and head of the body601 of the electrostatic chuck 600, provided that the first and secondpower source holes 603 a and 603 b are located apart from each other. Inthis case, when the electrostatic chuck 600 passes through the chamberdoor 733, the first power source plug 604 a should also be separatedfrom the first power source hole 603 a at the moment or after the secondpower source plug 604 b is inserted into the second power source hole603 b as illustrated in FIG. 6, thereby preventing an interruption insupply of power to the electrode 602.

FIG. 7 is a cross-sectional view of a system that supplies power to theelectrostatic chuck 600 during movement, according to another embodimentof the present invention. In the current embodiment, the electrostaticchuck 600 is moved from the transport chamber 716 to the first inversionchamber 718 and finally, to the first chamber 731.

Referring to FIG. 7, a third power source hole 603 c, a fourth powersource hole 603 d, and a fifth power source hole 603 e are formed atdifferent locations on a body 601 of the electrostatic chuck 600. Athird power source plug 604 c, a fourth power source plug 604 d, and afifth power source plug 604 e are installed in the first transportchamber 716, the first inversion chamber 718, and the first chamber 731,respectively. The fourth power source plug 604 d is installed in thefirst inversion robot 719.

The electrostatic chuck 600 is moved while the third power source plug604 c is inserted into the third power source hole 603 c in thetransport chamber 716. Even after the electrostatic chuck 600 ispartially or completely moved from the transport chamber 716 to thefirst inversion chamber 718, the third power source plug 604 c ismaintained in the third power source hole 603 c, thereby continuouslysupplying power to the electrode 602. In the first inversion chamber718, the third power source plug 604 c is separated from the third powersource hole 603 c at the moment or after the fourth power source plug604 d installed in the first inversion robot 719 is inserted into thefourth power source hole 603 d. The first inversion robot 719 turns theelectrostatic chuck 600 over in the first inversion chamber 718 so thatthe substrate 500 placed on the electrostatic chuck 600 is turned upsidedown, and the electrostatic chuck 600 enters into the first chamber 731.Then, the fourth power source plug 604 d is separated from the fourthpower source hole 603 d at the moment or after the fifth power sourceplug 604 e is inserted into the fifth power source hole 603 e in thefirst chamber 731.

Accordingly, in the current embodiment, the electrostatic chuck 600 canbe powered continuously even while the electrostatic chuck 600 is movedby a carrier.

Next, the first thin film deposition assembly 100 disposed in the firstchamber 731 will be described.

FIG. 8 is a schematic perspective view of a thin film depositionassembly 100 according to an embodiment of the present invention. FIG. 9is a schematic sectional side view of the thin film deposition assembly100 of FIG. 8. FIG. 10 is a schematic sectional plan view of the thinfilm deposition assembly 100 of FIG. 8.

Referring to FIGS. 8 to 10, the thin film deposition assembly 100includes a deposition source 110, a deposition source nozzle unit 120,and a patterning slit sheet 150.

Specifically, it is desirable to maintain the first chamber 731 of FIG.1 in a high-vacuum state as in a deposition method using a fine metalmask (FMM) so that a deposition material 115 emitted from the depositionsource 110 may be deposited onto a substrate 400 in a desired patternvia the deposition source nozzle unit 120 and the patterning slit sheet150. In addition, the temperature of the patterning slit sheet 150should be sufficiently lower than that of the deposition source 110. Inthis regard, the temperature of the patterning slit sheet 150 may beabout 100° C. or less. The temperature of the patterning slit sheet 150should be sufficiently low so as to minimize thermal expansion of thepatterning slit sheet 150.

The substrate 500, which is a deposition target, is disposed in thefirst chamber 731. The substrate 500 may be a substrate for flat paneldisplays. A large substrate, such as a mother glass, for manufacturing aplurality of flat panel displays, may be used as the substrate 500.Other substrates may also be employed. The substrate is affixed to theelectrostatic chuck 600 as describe above.

In the current embodiment, deposition may be performed while thesubstrate 500 or the thin film deposition assembly 100 is moved relativeto the other. Herein, where it is stated that the substrate or thin filmdeposition assembly is moved relative to the other, it is to beunderstood that such statement encompasses an embodiment in which onlythe substrate is moved and the thin film deposition assembly remainsstationary, an embodiment in which only the thin film depositionassembly is moved and the substrate remains stationary and an embodimentin which both the thin film deposition assembly and the substrate aremoved.

In particular, in the conventional FMM deposition method, the size ofthe FMM should be equal to the size of a substrate. Thus, the size ofthe FMM has to be increased when larger substrates are used. However, itis difficult to manufacture a large FMM and to extend an FMM to beaccurately aligned with a pattern.

In order to overcome this problem, in the thin film deposition assembly100 according to the current embodiment, deposition may be performedwhile the thin film deposition assembly 100 or the substrate 500 ismoved relative to the each other. In more detail, deposition may becontinuously performed while the substrate 500, which is disposed suchas to face the thin film deposition assembly 100, is moved in a Y-axisdirection. That is, deposition is performed in a scanning manner whilethe substrate 500 is moved in a direction of arrow A in FIG. 8.

In the thin film deposition assembly 100 according to the currentembodiment, the patterning slit sheet 150 may be significantly smallerthan an FMM used in a conventional deposition method. That is, in thethin film deposition assembly 100 according to the current embodiment,deposition is continuously performed, i.e., in a scanning manner whilethe substrate 500 is moved in the Y-axis direction. Thus, the lengths ofthe patterning slit sheet 950 in the X-axis and Y-axis directions may besignificantly less than the lengths of the substrate 500 in the X-axisand Y-axis directions. As described above, since the patterning slitsheet 150 may be formed to be significantly smaller than an FMM used ina conventional deposition method, it is relatively easy to manufacturethe patterning slit sheet 150. That is, using the patterning slit sheet150, which is smaller than an FMM used in a conventional depositionmethod, is more convenient in all processes, including etching and othersubsequent processes, such as precise extension, welding, moving, andcleaning processes, than using the larger FMM. This is more advantageousfor a relatively large display device.

The deposition source 110 that contains and heats the depositionmaterial 115 is disposed in an opposite side of the thin film depositionassembly 100 from a side in which the substrate 500 is disposed. Thedeposition material 115 that is vaporized in the deposition source 110is deposited onto the substrate 500.

In particular, the deposition source 110 includes a crucible 112 that isfilled with the deposition material 115, and a heater (not shown) thatheats the crucible 112 to vaporize the deposition material 115, which iscontained in the crucible 112, such that the deposition material 115 isdirected towards the deposition source nozzle unit 120. The coolingblock 111 prevents heat generated from the crucible 112 from beingconducted to the outside, i.e., the first chamber 731. The heater may beincorporated in the cooling block 111.

The deposition source nozzle unit 120 is disposed at a side of thedeposition source 110, and in particular, at the side of the depositionsource 110 facing the substrate 500. The deposition source nozzle unit120 includes a plurality of deposition source nozzles 121 in the Y-axisdirection, i.e., a scanning direction of the substrate 500. Theplurality of deposition source nozzles 121 may be arranged at equalintervals. The deposition material 115 that is vaporized in thedeposition source 110, passes through the deposition source nozzle unit120 towards the substrate 500. As described above, when the depositionsource nozzle unit 120 includes the plurality of deposition sourcenozzles 121 arranged in the Y-axis direction, that is, the scanningdirection of the substrate 500, the size of a pattern formed of thedeposition material 115 discharged through a plurality of patterningslits 151 of the patterning slit sheet 150 is affected by the size ofeach of the deposition source nozzles 121 (since there is only one lineof deposition nozzles in the X-axis direction), thereby preventing ashadow zone from being formed on the substrate 500. In addition, sincethe plurality of deposition source nozzles 121 are arranged in thescanning direction of the substrate 500, even there is a difference influx between the deposition source nozzles 121, the difference may becompensated for and deposition uniformity may be maintained constantly.

The patterning slit sheet 150 and a frame 155 are disposed between thedeposition source 110 and the substrate 500. The frame 155 may be formedin a shape similar to a window frame. The patterning slit sheet 150 isbound inside the frame 155. The patterning slit sheet 150 includes theplurality of patterning slits 151 arranged in the X-axis direction. Thedeposition material 115 that is vaporized in the deposition source 110,passes through the deposition source nozzle unit 120 and the patterningslit sheet 150 towards the substrate 500. The patterning slit sheet 150may be manufactured by etching, which is the same method as used in aconventional method of manufacturing an FMM, and in particular, astriped FMM. In this regard, the total number of the patterning slits151 may be greater than the total number of the deposition sourcenozzles 121.

In addition, the deposition source 110 (and the deposition source nozzleunit 120 coupled to the deposition source 110) may be disposed to bespaced apart from the patterning slit sheet 150 by a predetermineddistance. The deposition source 110 (and the deposition source nozzleunit 120 coupled to the deposition source 110) may be connected to thepatterning slit sheet 150 by connection members 135. That is, thedeposition source 110, the deposition source nozzle unit 120, and thepatterning slit sheet 150 may be integrally formed as one body by beingconnected to one another via the connection members 135. The connectionmembers 135 may guide the deposition material 151, which is dischargedthrough the deposition source nozzles 121, to move straight and not todeviate in the X-axis direction.

Referring to FIG. 8, the connection members 135 are formed on left andright sides of the deposition source 110, the deposition source nozzleunit 120, and the patterning slit sheet 150 to guide the depositionmaterial 915 not to deviate in the X-axis direction; however, aspects ofthe present invention are not limited thereto. For example, theconnection member 135 may be formed in the form of a sealed box to guideflow of the deposition material 915 both in the X-axis and Y-axisdirections.

As described above, the thin film deposition assembly 100 according tothe current embodiment performs deposition while being moved relative tothe substrate 500. In order to move the thin film deposition assembly100 relative to the substrate 500, the patterning slit sheet 150 isspaced apart from the substrate 500 by a predetermined distance.

More specifically, in a conventional deposition method using an FMM,deposition is performed with the FMM in close contact with a substratein order to prevent formation of a shadow zone on the substrate.However, when the FMM is used in close contact with the substrate, thecontact may cause defects. In addition, in the conventional depositionmethod, the size of the mask has to be the same as the size of thesubstrate since the mask cannot be moved relative to the substrate.Thus, the size of the mask has to be increased as display devices becomelarger but it is not easy to manufacture such a large mask.

In order to overcome this problem, in the thin film deposition assembly100 according to the current embodiment, the patterning slit sheet 150is disposed to be spaced apart from the substrate 500 by a predetermineddistance.

As described above, according to aspects of the present invention, amask may be formed to be smaller than a substrate, and deposition may beperformed while the mask is moved relative to the substrate. Thus, themask can be easily manufactured. In addition, it is possible to preventoccurrence of defects caused by the contact between the substrate andthe mask. Furthermore, since it is unnecessary to use the mask in closecontact with the substrate during a deposition process, themanufacturing time may be reduced.

FIG. 11 is a schematic perspective view of a thin film depositionassembly 100 according to another embodiment of the present invention.Referring to FIG. 10, the thin film deposition assembly 100 according tothe current embodiment includes a deposition source 110, a depositionsource nozzle unit 120, and a patterning slit sheet 150. The depositionsource 110 includes a crucible 112 that is filled with a depositionmaterial 115, and a cooling block 111 including a heater that heats thecrucible 112 to vaporize the deposition material 115 that is containedin the crucible 112, so as to move the vaporized deposition material 115to the deposition source nozzle unit 120. The deposition source nozzleunit 120, which has a planar shape, is disposed at a side of thedeposition source 110, and includes a plurality of deposition sourcenozzles 121 arranged in the Y-axis direction. The patterning slit sheet150 and a frame 155 are further disposed between the deposition source110 and a substrate 500. The patterning slit sheet 150 includes aplurality of patterning slits 151 arranged in the X-axis direction. Inaddition, the deposition source 110 and the deposition source nozzleunit 120 may be connected to the patterning slit sheet 150 by firstconnection members 135.

In the current embodiment, the plurality of deposition source nozzles121 formed on the deposition source nozzle unit 120 are tilted at apredetermined angle, unlike the embodiment described with reference toFIG. 8. In particular, the deposition source nozzles 121 may includedeposition source nozzles 121 a and 121 b arranged in respective rows.The deposition source nozzles 121 a and 121 b may be arranged inrespective rows to alternate in a zigzag pattern. The deposition sourcenozzles 121 a and 121 b may be tilted at a predetermined angle on an X-Zplane.

In the current embodiment of the present invention, the depositionsource nozzles 121 a and 121 b are arranged to tilt at a predeterminedangle toward each other. The deposition source nozzles 121 a in a firstrow and the deposition source nozzles 121 b in a second row may tilt atthe predetermined angle to face each other. In other words, thedeposition source nozzles 121 a of the first row in a left part of thedeposition source nozzle unit 121 may tilt to face a right side portionof the patterning slit sheet 150, and the deposition source nozzles 121b of the second row in a right part of the deposition source nozzle unit121 may tilt to face a left side portion of the patterning slit sheet150.

Owing to the structure of the thin film deposition assembly 100according to the current embodiment, the deposition of the depositionmaterial 115 may be adjusted to lessen a thickness variation between thecenter and end portions of the substrate 500, thereby improvingthickness uniformity of a deposition film. Moreover, utilizationefficiency of the deposition material 115 may also be improved.

FIG. 12 is a schematic perspective view of a thin film depositionapparatus according to another embodiment of the present invention.Referring to FIG. 13, the thin film deposition apparatus according tothe current embodiment includes a plurality of thin film depositionassemblies, each of which has the structure of the thin film depositionapparatus 100 illustrated in FIGS. 8 through 10. In other words, thethin film deposition apparatus according to the current embodiment mayinclude a multi-deposition source that simultaneously dischargesdeposition materials for forming a red (“R”) emission layer, a green(“G”) emission layer, and a blue (“B”) emission layer.

In particular, the thin film deposition apparatus according to thecurrent embodiment includes a first thin film deposition assembly 100, asecond thin film deposition assembly 200, and a third thin filmdeposition assembly 300. The first thin film deposition assembly 100,the second thin film deposition assembly 200, and the third thin filmdeposition assembly 300 have the same structure as the thin filmdeposition assembly 100 described with reference to FIGS. 8 through 10,and thus a detailed description thereof will not be repeated here.

Deposition sources of the first, second and third thin film depositionassemblies 100, 200 and 300 may contain different deposition materials,respectively. For example, the first thin film deposition assembly 100may contain a deposition material for forming the R emission layer, thesecond thin film deposition assembly 200 may contain a depositionmaterial for forming the G emission layer, and the third thin filmdeposition assembly 300 may contain a deposition material for formingthe B emission layer.

In a conventional method of manufacturing an organic light-emittingdisplay device, a separate chamber and mask are used to form each coloremission layer. However, when the thin film deposition apparatusaccording to the current embodiment is used, the R emission layer, the Gemission layer and the B emission layer may be formed at the same timewith a single multi-deposition source. Thus, it is possible to sharplyreduce a time needed to manufacture an organic light-emitting displaydevice. Furthermore, the organic light-emitting display device may bemanufactured with fewer chambers, so that equipment costs are alsomarkedly reduced. In particular, thin film deposition assemblies 100,200, 300 may be located in a single deposition chamber 731 as shown inFIG. 1 or in separate deposition chambers 731 and 732 housed in a singledeposition unit 730 as shown in FIG. 2 through which a circulating unit610 conveys an electrostatic chuck 600 to which a substrate 500 isaffixed.

Although not illustrated, patterning slit sheets of the first, second,and third thin film deposition assemblies 100, 200, and 300 may bearranged to be offset by a predetermined distance with respect to eachother, so that deposition regions corresponding to the patterning slitsheets do not to overlap with one another on a substrate 500. In otherwords, if the first thin film deposition assembly 100, the second thinfilm deposition assembly 200, and the third thin film depositionassembly 200 are used to deposit the R emission layer, the G emissionlayer and the B emission layer, respectively, then patterning slits ofthe first, second, and third thin film deposition assemblies 100, 200,and 300 are arranged not to be aligned with respect to each other, inorder to form the R emission layer, the G emission layer and the Bemission layer in different regions of the substrate 500.

In addition, the deposition materials for forming the R emission layer,the G emission layer, and the B emission layer may be vaporized atdifferent temperatures. Therefore, the temperatures of the depositionsources of the respective first, second, and third thin film depositionassemblies 100, 200, and 300 may be set to be different.

Although the thin film deposition apparatus according to the currentembodiment includes three thin film deposition assemblies, the presentinvention is not limited thereto. That is, a thin film depositionapparatus according to another embodiment of the present invention mayinclude a plurality of thin film deposition assemblies, each of whichcontains a different deposition material. For example, a thin filmdeposition apparatus according to another embodiment of the presentinvention may include five thin film deposition assemblies respectivelycontaining materials for an R emission layer, a G emission layer, a Bemission layer, an auxiliary layer R′ of the R emission layer, and anauxiliary layer G′ of the G emission layer.

As described above, a plurality of thin films may be formed at the sametime with a plurality of thin film deposition assemblies, and thusmanufacturing yield and deposition efficiency are improved. In addition,the overall manufacturing process is simplified and the manufacturingcosts are reduced.

FIG. 13 is a schematic perspective view of a thin film depositionapparatus 100 according to another embodiment of the present invention.FIG. 14 is a schematic sectional side view of the thin film depositionapparatus 100. FIG. 15 is a schematic sectional plan view of the thinfilm deposition apparatus 100.

Referring to FIGS. 13 to 15, the thin film deposition assembly 100according to the current embodiment includes a deposition source 110, adeposition source nozzle unit 120, a barrier plate assembly 130, and apatterning slit sheet 150.

Although a chamber is not illustrated in FIGS. 13 through 15 forconvenience of explanation, all the components of the thin filmdeposition apparatus 100 may be disposed within a chamber that ismaintained at an appropriate degree of vacuum. The chamber is maintainedat an appropriate vacuum in order to allow a deposition material 115 tomove in a substantially straight line through the thin film depositionapparatus 100.

A substrate 500 which is a deposition target is moved in the chamber byan electrostatic chuck 600. The substrate 500 may be a substrate forflat panel displays. A large substrate, such as a mother glass, formanufacturing a plurality of flat panel displays, may be used as thesubstrate 500.

In the current embodiment of the present invention, the substrate 500 orthe thin film deposition assembly 100 is moved relative to the other. Inparticular, the substrate 500 may be moved with respect to the thin filmdeposition assembly 100 in a direction marked by an arrow A.

In the thin film deposition assembly 100 according to the currentembodiment (and similar to the thin film deposition assembly 100 of FIG.8), the patterning slit sheet 150 may be significantly smaller than anFMM used in a conventional deposition method. That is, in the thin filmdeposition assembly 100 according to the current embodiment, depositionis continuously performed, i.e., in a scanning manner while thesubstrate 500 is moved in the Y-axis direction. Thus, if the lengths ofthe patterning slit sheet 150 and the substrate 500 are the same in theX-axis direction, then a length of the pattering slit sheet 150 may befar less than a length of the substrate 500 in the Y-axis direction.However, even if the length of the patterning slit sheet 150 in theX-axis direction is less than the length of the substrate 500 in theX-axis direction, deposition may be performed over an entire surface ofthe substrate 500 since the manner in which the substrate 500 or thethin film deposition assembly 100 is moved relative to the other may beadapted.

As described above, since the patterning slit sheet 150 may be formed tobe significantly smaller than an FMM used in a conventional depositionmethod, it is relatively easy to manufacture the patterning slit sheet150. That is, using the patterning slit sheet 150, which is smaller thanan FMM used in a conventional deposition method, is more convenient inall processes, including etching and subsequent other processes, such asprecise extension, welding, moving, and cleaning processes, than usingthe larger FMM. Accordingly, the use of the patterning slit sheet 150 ismore advantageous than the use of a conventional FMM for manufacturing arelatively large display device.

In the first chamber 731 of FIG. 1, the deposition source 110 thatcontains and heats the deposition material 115 is disposed to face thesubstrate 500.

The deposition source 110 according to the embodiment of FIGS. 12through 14 includes a crucible 112 filled with the deposition material115, and a cooling block 111 disposed to cover sides of the crucible112. The cooling block 111 prevents heat generated from the crucible 112from being conducted to the outside, i.e., toward the inside of thefirst chamber 731. The cooling block 111 includes a heater (not shown)that heats the crucible 112.

The deposition source nozzle unit 120 is disposed at a side of thedeposition source 110, and in particular, at the side of the depositionsource 110 facing the substrate 500. The deposition source nozzle unit120 includes a plurality of deposition source nozzles 121 arranged inthe X-axis direction. The plurality of deposition source nozzles 121 maybe arranged at equal intervals. The deposition material 115 that isvaporized in the deposition source 110, passes through the depositionsource nozzles 121 of the deposition source nozzle unit 120 towards thesubstrate 500.

The barrier plate assembly 130 is disposed at a side of the depositionsource nozzle unit 120 between the deposition source nozzle unit 120 andthe patterning slit sheet 150. The barrier plate assembly 130 includes aplurality of barrier plates 131, and a barrier plate frame 132 thatcovers sides of the barrier plates 131. The plurality of barrier plates131 may be arranged parallel to each other in X-axis direction. Theplurality of barrier plates 131 may be arranged at equal intervals. Inaddition, the barrier plates 131 may be arranged parallel to an Y-Zplane in FIG. 13 and may have a rectangular shape. The plurality ofbarrier plates 131 arranged as described above partition a depositionspace between the deposition source nozzle unit 120 and the patterningslit sheet 150 into a plurality of sub-deposition spaces S. That is, inthe thin film deposition assembly 100 according to the currentembodiment, as illustrated in FIG. 15, the deposition space is dividedby the barrier plates 131 into the sub-deposition spaces S thatrespectively correspond to the deposition source nozzles 121 throughwhich the deposition material 115 is discharged.

The barrier plates 131 may be respectively disposed between adjacentdeposition source nozzles 121. In other words, each of the depositionsource nozzles 121 may be disposed between two adjacent barrier plates131. The deposition source nozzles 121 may be respectively located atthe midpoint between two adjacent barrier plates 131. However, thepresent invention is not limited thereto and a plurality of thedeposition source nozzles 121 may be disposed between two adjacentbarrier plates 131. In this case, a plurality of the deposition sourcenozzles 121 may be respectively located at the midpoint between twoadjacent barrier plates 131.

As described above, since the barrier plates 131 partition the spacebetween the deposition source nozzle unit 120 and the patterning slitsheet 150 into the plurality of sub-deposition spaces S, the depositionmaterial 115 discharged through each of the deposition source nozzles121 is not mixed with the deposition material 115 discharged through theother deposition source nozzles 121, and passes through patterning slits151 so as to be deposited on the substrate 500. In other words, thebarrier plates 131 guide the deposition material 115, which isdischarged through the deposition source nozzles 121, to move straight,not to deviate in the X-axis direction.

As described above, the deposition material 115 is forced to movestraight by installing the barrier plates 131, so that a smaller shadowzone may be formed on the substrate 500 compared to a case where nobarrier plates are installed. Thus, the thin film deposition assembly100 and the substrate 500 can be spaced apart from each other by apredetermined distance. This will be described later in detail.

The barrier plate frame 132, which covers sides of the barrier plates131, maintains the positions of the barrier plates 131, and guides thedeposition material 115, which is discharged through the depositionsource nozzles 121, and prevents deviation of the deposition material115 in the Y-axis direction.

The deposition source nozzle unit 120 and the barrier plate assembly 130may be disposed apart from each other by a predetermined distance.Accordingly, heat emitted from the deposition source 110 may beprevented from being conducted to the barrier plate assembly 130.However, the present invention is not limited thereto. That is, if anappropriate insulating device is installed between the deposition sourcenozzle unit 120 and the barrier plate assembly 130, the depositionsource nozzle unit 120 and the barrier plate assembly 130 may becombined to contact each other.

In addition, the barrier plate assembly 130 may be constructed to beattachable to and detachable from the thin film deposition assembly 100.In order to overcome these problems, in the thin film depositionassembly 100 according to the current embodiment, the deposition spaceis enclosed by using the barrier plate assembly 130, so that thedeposition material 115 that is not deposited on the substrate 500 ismostly deposited within the barrier plate assembly 130. Thus, since thebarrier plate assembly 130 is constructed to be attachable to anddetachable from the thin film deposition assembly 100, when a largeamount of the deposition material 115 is present on surfaces of thebarrier plate assembly 130 after a long deposition process, the barrierplate assembly 130 may be detached from the thin film depositionassembly 100 and then placed in a separate deposition material recyclingapparatus in order to recover the deposition material 115. Due to thestructure of the thin film deposition assembly 100 according to thepresent embodiment, a reuse rate of the deposition material 115 isincreased, so that the deposition efficiency is improved, and thus themanufacturing costs are reduced.

The patterning slit sheet 150 and a frame 155 in which the patterningslit sheet 150 is bound are disposed between the deposition source 110and the substrate 500. The frame 155 may be formed in a lattice shape,similar to a window frame. The patterning slit sheet 150 is bound insidethe frame 155. The patterning slit sheet 150 includes a plurality ofpatterning slits 151 arranged in the X-axis direction. Each of thepatterning slits 151 extends in the Y-axis direction. The depositionmaterial 115 that is vaporized in the deposition source 110, passesthrough the deposition source nozzles 121 towards the substrate 500.

The patterning slit sheet 150 may be embodied as a metal thin plate andis bound in the frame 155 when extended. The patterning slits 151 areformed in stripes in the patterning slit sheet 150 by using an etchingprocess.

In the thin film deposition assembly 100 according to the currentembodiment, the total number of the patterning slits 151 is greater thanthe total number of the deposition source nozzles 121. In addition,there may be a greater number of patterning slits 151 than depositionsource nozzles 121 disposed between two adjacent barrier plates 131. Thenumber of the patterning slits 151 may correspond to the number ofdeposition patterns to be formed in the substrate 500.

In addition, the barrier plate assembly 130 and the patterning slitsheet 150 may be disposed apart from each other by a predetermineddistance. Alternatively, the barrier plate assembly 130 and thepatterning slit sheet 150 may be connected by second connection members133. The temperature of the barrier plate assembly 130 may increase to100° C. or higher due to the deposition source 110 whose temperature ishigh. Thus, in order to prevent the heat of the barrier plate assembly130 from being conducted to the patterning slit sheet 150, the barrierplate assembly 130 and the patterning slit sheet 150 may be disposedapart from each other by a predetermined distance.

As shown in FIGS. 13 and 15, the thin film deposition assembly 100 mayalso include one or more alignment devices 170 and one or more alignmenttargets 159 and 501 that assist in alignment of the patterning slitsheet 150 with respect to the substrate 500.

As described above, the thin film deposition assembly 100 according tothe current embodiment performs deposition while the substrate 500 andthe thin film deposition assembly 100 are moved relative to the other.In order to move the thin film deposition assembly 100 or the substrate500 relative to the other, the patterning slit sheet 150 is spaced apartfrom the substrate 500 by a predetermined distance. In addition, inorder to prevent the formation of a relatively large shadow zone on thesubstrate 500 when the patterning slit sheet 150 and the substrate 400are separated from each other, the barrier plates 131 are arrangedbetween the deposition source nozzle unit 120 and the patterning slitsheet 150 to force the deposition material 115 to move in a straightdirection. Thus, the size of the shadow zone formed on the substrate 500is sharply reduced.

In particular, in a conventional deposition method using an FMM,deposition is performed with the FMM in close contact with a substratein order to prevent formation of a shadow zone on the substrate.However, when the FMM is used in close contact with the substrate,patterns that have been formed on the substrate may be scratched due tothe contact, thereby causing defects. In addition, in the conventionaldeposition method, the size of the mask has to be the same as the sizeof the substrate since the mask cannot be moved relative to thesubstrate. Thus, the size of the mask has to be increased as displaydevices become larger. However, it is not easy to manufacture such alarge mask.

In order to overcome this problem, in the thin film deposition assembly100 according to the current embodiment, the patterning slit sheet 150is disposed apart from the substrate 500 by a predetermined distance.The formation of a desirable deposition pattern may be facilitated byinstalling the barrier plates 131 to reduce the size of the shadow zoneformed on the substrate 500.

In the current embodiment, the patterning slit sheet 150 is formed to besmaller than the substrate 500 and to be moved relative to the substrate500 as described above. Thus, a larger mask does not need to bemanufactured unlike in a conventional deposition method using an FMM. Inaddition, defects caused due to the contact between a substrate and anFMM, which occurs in the conventional deposition method, are preventedsince the substrate 500 and the patterning slit sheet 150 are disposedapart from each other. In addition, since it is unnecessary to disposethe patterning slit sheet 150 in close contact with the substrate 500during a deposition process, the manufacturing speed may be improved.

A plurality of the thin film deposition assemblies 100 according to thecurrent embodiment may be arranged consecutively within the firstchamber 731 as illustrated in FIG. 1. In this case, different depositionmaterials may be deposited on the plurality of the thin film depositionassemblies 100, respectively, and patterning slits formed in theplurality of the thin film deposition assemblies 100 may have differentpatterns from one another. Accordingly, it is possible to simultaneouslyform a plurality of layers, for example, red, green, and blue pixels.

As shown in FIG. 12, the thin film deposition assembly 100 may alsoinclude one or more alignment devices 170 and one or more alignmenttargets 159 that assist in alignment of the patterning slit sheet 150with respect to the substrate 100.

FIG. 16 is a schematic perspective view of a modified example of thethin film deposition assembly 100 of FIG. 13.

Referring to FIG. 16, the thin film deposition assembly 100 according tothe current embodiment includes a deposition source 110, a depositionsource nozzle unit 120, a first barrier plate assembly 130, a secondbarrier plate assembly 140, and a patterning slit sheet 150.

Although a chamber is not illustrated in FIG. 16 for convenience ofexplanation, all the components of the thin film deposition assembly 100may be disposed within a chamber that is maintained at an appropriatedegree of vacuum.

The chamber is maintained at an appropriate vacuum in order to allow adeposition material to move in a substantially straight line through thethin film deposition assembly 100.

The substrate 500, which constitutes a target on which a depositionmaterial 115 is to be deposited, is disposed in the chamber. Thedeposition source 115 that contains and heats the deposition material115 is disposed in an opposite side of the chamber to the side in whichthe substrate 500 is disposed.

Detailed structures of the deposition source 110 and the patterning slitsheet 150 are the same as those of FIG. 13 and thus, detaileddescriptions thereof will not be repeated here. The first barrier plateassembly 130 is the same the barrier plate assembly 130 of FIG. 13 andthus, a detailed description thereof will not be repeated here.

The second barrier plate assembly 140 is disposed at a side of the firstbarrier plate assembly 130. The second barrier plate assembly 140includes a plurality of second barrier plates 141 and a second barrierplate frame 141 that constitutes an outer plate of the second barrierplates 142.

The plurality of second barrier plates 141 may be arranged parallel toeach other at equal intervals in the X-axis direction. In addition, eachof the second barrier plates 141 may be formed to extend in the YZ planein FIG. 14, i.e., perpendicular to the X-axis direction.

The plurality of first barrier plates 131 and second barrier plates 141arranged as described above partition the space between the depositionsource nozzle unit 120 and the patterning slit sheet 150. The depositionspace is divided by the first barrier plates 131 and the second barrierplates 141 into sub-deposition spaces that respectively correspond tothe deposition source nozzles 121 through which the deposition material115 is discharged.

The second barrier plates 141 may be disposed to correspond to the firstbarrier plates 131. The second barrier plates 141 may be respectivelydisposed to be parallel to and to be on the same plane as the firstbarrier plates 131. Each pair of the corresponding first and secondbarrier plates 131 and 141 may be located on the same plane. Althoughthe first barrier plates 131 and the second barrier plates 141 arerespectively illustrated as having the same thickness in the Y-axisdirection, aspects of the present invention are not limited thereto. Thesecond barrier plates 141, which may be accurately aligned with thepatterning slit sheet 151, may be formed to be relatively thin, whereasthe first barrier plates 131, which do not need to be precisely alignedwith the patterning slit sheet 151, may be formed to be relativelythick. This makes it easier to manufacture the thin film depositionassembly 100.

FIG. 17 is a cross-sectional view of an active matrix organiclight-emitting display device manufactured using a thin film depositionapparatus according to an embodiment of the present invention. It is tobe understood that where is stated herein that one layer is “formed on”or “disposed on” a second layer, the first layer may be formed ordisposed directly on the second layer or there may be intervening layersbetween the first layer and the second layer. Further, as used herein,the term “formed on” is used with the same meaning as “located on” or“disposed on” and is not meant to be limiting regarding any particularfabrication process. Referring to FIG. 17, the active matrix organiclight-emitting display device is formed on a substrate 30. The substrate30 may be formed of a transparent material, e.g., glass, plastic, ormetal. An insulation layer 31, such as buffer layer, may be formed onthe substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organiclight-emitting device 60 are disposed on the insulating layer 31 asillustrated in FIG. 16.

A semiconductor active layer 41 is formed in a predetermined pattern onthe insulating layer 31. The semiconductor active layer 41 is covered bya gate insulating layer 32. The semiconductor active layer 41 may beembodied as a p type or n type semiconductor layer.

A gate electrode 42 of the TFT 40 is formed on a part of the gateinsulating layer 32 which corresponds to the active layer 41. Also, aninterlayer insulating layer 33 is formed to cover the gate electrode 42.After the interlayer insulating layer 33 is formed, a plurality ofcontact holes are formed by etching the gate insulating layer 32 and theinterlayer insulating layer 33 according to an etching process, e.g., adry etching process, thereby partially exposing the active layer 41.

A source/drain electrode 43 is formed on the interlayer insulating layer33 to contact the parts of the active layer 41 exposed via the contactholes. Next, a protective layer 34 is formed to cover the source/drainelectrode 43, and the drain electrode 43 is partially exposed using anetching process. An insulating layer may further be formed on theprotective layer 34 in order to planarize the protective layer 34.

The organic light-emitting device 60 emits red, green, or blue lightdepending on the flow of current in order to display image information,and a first electrode 61 is formed on the protective layer 34. The firstelectrode 61 is electrically connected to the drain electrode 43 of theTFT 40.

A pixel defined layer 35 is formed to cover the first electrode 61.After a predetermined aperture 64 is formed in the pixel defined layer35, an organic light-emitting layer 63 is formed in a region defined bythe aperture 64. A second electrode 62 is formed on the organiclight-emitting layer 63.

The pixel defined layer 35 is used to define a plurality of pixels. Thepixel defined layer 35 is formed of an organic material to planarize asurface of a layer on which the first electrode 61 is disposed, and inparticular, a surface of the protective layer 34.

The first electrode 61 and the second electrode 62 are insulated fromeach other, and respectively apply voltages of opposite polarities tothe organic light-emitting layer 63 to induce light emission in theorganic light-emitting layer 63.

The organic light-emitting layer 63 may include a low-molecular weightorganic layer or a high-molecular weight organic layer. When alow-molecular weight organic layer is used as the organic light-emittinglayer 63, the organic light-emitting layer 63 may have a single ormulti-layer structure including at least one selected from the groupconsisting of a hole injection layer (HIL), a hole transport layer(HTL), an emission layer (EML), an electron transport layer (ETL), anelectron injection layer (EIL), etc. Examples of available organicmaterials include copper phthalocyanine (CuPc),N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB),tris-8-hydroxyquinoline aluminum (Alq3), etc. These low-molecular weightorganic layers may be formed according to a vacuum deposition method byusing a thin film deposition apparatus as illustrated in FIGS. 1 to 16.

The aperture 64 is formed in the pixel defined layer 35, and thesubstrate 30 is moved within the first chamber 731 as illustrated inFIG. 1. Next, a target organic materials are deposited by the first tofourth thin film deposition assemblies 100 to 400.

After the organic light-emitting layer 63 is formed, the secondelectrode 62 may also be formed in a similar manner to the organiclight-emitting layer 63.

The first electrode 61 may function as an anode and the second electrode62 may function as a cathode, or vice versa. The first electrode 61 maybe patterned to correspond to a plurality of pixel regions and thesecond electrode 62 may be formed to cover all the pixel regions.

The pixel electrode 61 may be formed as a transparent electrode or areflective electrode. A transparent electrode may be formed of an indiumtin oxide (ITO), an indium zinc oxide (IZO), a zinc oxide (ZnO), or anindium oxide (In₂O₃). A reflective electrode may be formed by forming areflective layer from silver (Ag), magnesium (Mg), aluminum (Al),platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd),iridium (Ir), chromium (Cr) or a compound thereof and then forming alayer of ITO, IZO, ZnO, or In₂O₃ on the reflective layer. The firstelectrode 61 is obtained by forming a layer according to a sputteringmethod and by patterning the layer according to a photolithographyprocess.

The second electrode 62 may also be formed as a transparent electrode ora reflective electrode. When the second electrode 62 is formed as atransparent electrode, the second electrode 62 functions as a cathode.To this end, such a transparent electrode may be formed by depositing ametal having a low work function, such as lithium (Li), calcium (Ca),lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/AI),aluminum (Al), silver (Ag), magnesium (Mg), or a compound thereof on asurface of the organic light-emitting layer 63 and then forming anauxiliary electrode layer or a bus electrode line thereon by using ITO,IZO, ZnO, In₂O₃, or the like. When the second electrode 62 is formed asa reflective electrode, the second electrode 62 may be formed bydepositing Li, Ca, LiF/Ca, LiF/AI, Al, Ag, Mg, or a compound thereof onthe entire surface of the organic light-emitting layer 63. In this case,deposition may be performed in a similar manner to the organiclight-emitting layer 63.

In addition, embodiments of the present invention can be used not onlyto form an organic or inorganic layer for an organic TFT but also toform layers of various materials for various purposes. Moreover, it isto be understood that the structure of an active matrix organiclight-emitting display device fabricated using a thin film depositionapparatus according to embodiments of the present invention may varyfrom what is shown in FIG. 17.

As described above, according to the above embodiments of the presentinvention, a thin film deposition apparatus and a method of easilymanufacturing an organic light-emitting display device using the sameare provided. The thin film deposition apparatus may be simply appliedto manufacture large display devices on a mass scale, and may improvemanufacturing yield and deposition efficiency. Also, an electrostaticchuck may be used to stably support a large substrate, that is, toprevent the substrate from sagging, and may be used to smoothly move asubstrate from one chamber to another chamber.

Although a few embodiments of the present invention have been shown anddescribed, it would be appreciated by those skilled in the art thatchanges may be made in this embodiment without departing from theprinciples and spirit of the invention, the scope of which is defined inthe claims and their equivalents.

1. A method of manufacturing an organic light-emitting device, themethod comprising: affixing a substrate which is a deposition target toan electrostatic chuck, wherein the electrostatic chuck comprises a bodyhaving a supporting surface that contacts the substrate to affix thesubstrate by an electrostatic force, an electrode embedded into the bodyand applying an electrostatic force to the supporting surface, and aplurality of power source holes that are formed to expose the electrodeand that are formed at different locations on the body; moving theelectrostatic chuck supporting the substrate to pass through a pluralityof chambers that are maintained in a vacuum state, wherein at least oneof a plurality of power source plugs is engaged with a power source holeof the plurality of power source holes at all times when the substrateis supported by the electrostatic chuck and when the electrostatic chuckpasses through the plurality of chambers; inserting a first power sourceplug of the plurality of power source plugs into a first power sourcehole selected from among the plurality of power source holes to supplypower to the electrode, where the first power source plug is installedat an upstream of a path in which the electrostatic chuck is moved;inserting a second power source plug of the plurality of power sourceplugs into a second power source hole selected from among the pluralityof power source holes to supply power to the electrode, where the secondpower source plug is installed in the path to be downstream to the firstpower source plug with respect to the path; separating the first powersource plug from the first power source hole; and forming an organiclayer on the substrate by using a thin film deposition assembly disposedin at least one of the plurality of chambers and by moving theelectrostatic chuck supporting the substrate or the thin film depositionassembly relative to the other.
 2. The method of claim 1, wherein thefirst and second power source plugs are disposed in different chambers,and the second power source plug is inserted into the second powersource hole at about the same time that the first power source plug isseparated from the first power source hole.
 3. The method of claim 1,wherein an inversion robot is located in at least one of the pluralityof chambers to turn over the electrostatic chuck that supports thesubstrate, and the method further comprising: inserting a third powersource plug installed in the inversion robot into a third power sourcehole selected from among the plurality of power source holes; andseparating the third power source plug from the third power source holewhen the first power source or second power source is inserted into thefirst or second power source hole, respectively.
 4. The method of claim1, wherein the thin film deposition assembly comprises: a depositionsource that discharges a deposition material; a deposition source nozzleunit disposed at a side of the deposition source and including aplurality of deposition source nozzles arranged in a first direction;and a patterning slit sheet disposed opposite to and spaced apart fromthe deposition source nozzle unit and including a plurality ofpatterning slits arranged in a second direction perpendicular to thefirst direction, wherein the deposition source, the deposition sourcenozzle unit, and the patterning slit sheet are integrally formed as onebody, and the thin film deposition assembly is disposed apart from thesubstrate so that the depositing of the deposition material is performedwhile the substrate is moved relative to the thin film depositionapparatus in the first direction.
 5. The method of claim 1, wherein thethin film deposition assembly comprises: a deposition source thatdischarges a deposition material; a deposition source nozzle unitdisposed at a side of the deposition source and including a plurality ofdeposition source nozzles arranged in a first direction; a patterningslit sheet disposed opposite to and spaced apart from the depositionsource nozzle unit and including a plurality of patterning slitsarranged in the first direction; and a barrier plate assembly disposedbetween the deposition source nozzle unit and the patterning slit sheetin the first direction, and including a plurality of barrier plates forpartitioning a deposition space between the deposition source nozzleunit and the patterning slit sheet into a plurality of sub-depositionspaces, wherein the thin film deposition assembly is disposed apart fromthe substrate so that the depositing of the deposition material isperformed on the substrate by moving the thin film deposition assemblyor the substrate relative to the other.
 6. A method of manufacturing anorganic light-emitting device, the method comprising: affixing asubstrate which is a deposition target to an electrostatic chuck,wherein the electrostatic chuck comprises a body having a supportingsurface that contacts the substrate to affix the substrate by anelectrostatic force, an electrode embedded into the body and applying anelectrostatic force to the supporting surface, and a plurality of powersource holes that are formed to expose the electrode and that are formedat different locations on the body; moving the electrostatic chuck towhich the substrate is affixed along a predetermined path to passthrough a plurality of chambers that are maintained in a vacuum state;supplying power to the electrode of the electrostatic chuck by engagingthe electrostatic chuck with one or more of a plurality of power sourceplugs arranged along the predetermined path and sequentially insertedinto and removed from the power source holes such that there is at leastone of the plurality of power source plugs engaged with a power sourcehole at all times when the substrate is affixed to the electrostaticchuck and when the electrostatic chuck passes through the plurality ofchambers; and forming an organic layer on the substrate depositing adeposition material from at least one thin film deposition assemblydisposed in at least one of the plurality of chambers as the substratemoves through the at least one of the plurality of chambers.